Maro Publications

Phase Change Memory



Maro Topics


Patents with Abstracts

Memory Devices

Phase Change Materials



Phase change memory devices are non-volatile, highly readable, highly programmable, and require a relatively lower driving voltage/current. Current trends in phase change memory development are to increase cell density and reduce current density thereof.

Phase change material in a phase change memory device has at least two solid phases, a crystalline state and an amorphous state. Transformation between these two phases can be achieved by changing the temperature of the phase change material. The phase change material exhibits different electrical characteristics depending on its state. For example, in its amorphous state the material exhibits a higher resistivity than in the crystalline state. Such phase change material may switch between numerous electrically detectable conditions of varying resistivities within a nanosecond time scale with the input of pico joules of energy. Since phase change material permits reversible phase transformation, memory bit status can be distinguished by determining the phase of phase change material in the memory bit.

[Lin and Wang, US Patent 8,242,034 (8/14/2012)]


Bookmark this page to follow future developments!.
(RDC 6/5/2012)


Roger D. Corneliussen

Maro Polymer Links
Tel: 610 363 9920
Fax: 610 363 9921


Copyright 2012 by Roger D. Corneliussen.
No part of this transmission is to be duplicated in any manner or forwarded by electronic mail without the express written permission of Roger D. Corneliussen

* Date of latest addition; date of first entry is 8/29/2012.